Photodiode with a dark current suppression junction

US9768340B2 · kind B2 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Debarshi Basu · San Francisco, US
• Henry Litzmann Edwards · Garland, US
• Dimitar T. Trifonov · Vail, US
• Josh Du · Tucson, US

Key dates

• Filing date: Nov 25, 2014
• Grant date: Sep 19, 2017
• Expiry date: Nov 25, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F30/245

Abstract

This invention relates to field photodiodes based on PN junctions that suffer from dark current leakage. An NBL is added to prove a second PN junction with the anode. The second PN junction is reversed biased in order to remove dark current leakage. The present solution requires no additional masks or thin films steps relative to a conventional CMOS process flow.