High speed surface plasmon coupled light emitting diodes
US9768347B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 28, 2014 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/034
Abstract
A light emitting diode device (LED) is provided. The LED comprises a first-doped layer on a substrate, an active layer on the first-doped layer, a second-doped layer on the active layer, and a metal layer on the second-doped layer. The second-doped layer is patterned on a surface opposite to the active layer to define a first portion and a second portion. The first portion of the second-doped layer has a first portion thickness constrained for electron-hole pairs in the active layer to couple efficiently to a surface plasmon mode at an interface of the metal layer and the second-doped layer thereby increasing the spontaneous emission rate of the LED. The second portion of the second-doped layer has a second portion thickness sufficient to ensure formation of a p-n junction in the LED.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.