Patent · US Active

Light emitting diode chip

US9768354B2 · kind B2 · utility

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Key dates

Filing dateDec 1, 2016
Grant dateSep 19, 2017
Priority date
Expiry dateDec 1, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/032

Abstract

A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface. An area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the microstructures is A2, such that A1 and A2 satisfy the relation of 0.1≦A2/(A1+A2)≦0.5. The light emitting diode element layer is disposed on the growth surface of the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.