Non volatile resistive memory cell and its method of making

US9768379B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Rémy GASSILLOUD · Chartreuse de Currière, FR
• Mathieu Bernard · Kerbarh, FR

Key dates

• Filing date: Jan 6, 2016
• Grant date: Sep 19, 2017
• Expiry date: Jan 6, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A resistive non-volatile memory cell including a Metal-Insulation-Metal stack including two electrodes and a multilayer of insulation, placed between the two electrodes, including a thin layer of oxide allowing for a resistive transition and an oxygen vacancy reservoir layer is provided. The stack includes from bottom to top: the bottom electrode including a metal layer, the insulation including a layer of stoichiometric metal oxide and a layer of substoichiometric metal oxide forming the oxygen vacancy reservoir layer, and the top electrode including a layer of metal oxide and a metal layer, such that the oxygen vacancy reservoir layer is inserted between two metal oxide stoichiometric layers.