High voltage level shifter in ultra low power supply memory application
US9768778B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 7, 2016 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Apr 7, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K3/356113
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A high voltage level shifter includes a first high-voltage P-channel metal oxide semiconductor (HVPMOS) transistor, a second HVPMOS transistor, a discharge transistor having a first native high-voltage N-channel metal oxide semiconductor (HVNMOS) transistor and a first low-voltage N-channel metal oxide semiconductor (LVNMOS) transistor connected in series, and an avalanche transistor having a second HVNMOS transistor and a second LVNMOS transistor connected in series.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.