Current accumulative pixel structure for CMOS-TDI image sensor
US9769407B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 2014 |
| Grant date | Sep 19, 2017 |
| Priority date | — |
| Expiry date | Dec 12, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/63
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The present invention relates to technical field of analog integrated circuit design. TDI function is better realized by CMOS image sensor and it improves scanning frequency of the CMOS-TDI image sensor and extends application range of TDI technique. To this end, the present invention proposes a technical solution of a current accumulative pixel structure for CMOS-TDI image sensor which comprises a photodiode, four MOS transistors M1, M2, M3, M4, four switches S1, S2, S3, S4, and two capacitors C1, C2; the connection relationship thereof is denoted below: the anode of the photodiode D1 is connected to a ground wire, while the cathode thereof is connected to an input end; the drain and gate of the transistor M1 are both connected with the input end, while the source thereof is connected with a power source VDD. The current invention mainly finds its application in analog integration circuit design.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.