Patent · US Active

Process for forming graphene layers on silicon carbide

US9771665B2 · kind B2 · utility

0Cited by

1References

18Claims

0Family size

Assignee

GRIFFITH UNIVERSITY · AU

Inventors

Francesca Iacopi · Leuven, BE
Mohsin Ahmed · Sunnyvale, US
Benjamin Vaughan Cunning · Calle de la Era, AU

Key dates

Filing date	Sep 8, 2014
Grant date	Sep 26, 2017
Priority date	—
Expiry date	Sep 8, 2034

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/0197
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for forming graphene, includes: depositing at least a first and a second metal onto a surface of silicon carbide (SiC), and heating the SiC and the first and second metals under conditions that cause the first metal to react with silicon of the silicon carbide to form carbon and at least one stable silicide. The corresponding solubilities of the carbon in the stable silicide and in the second metal are sufficiently low that the carbon produced by the silicide reaction forms a graphene layer on the SiC.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.