Skyrmion based universal memory operated by electric current
US9773540B2 · kind B2 · utility
28Cited by
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18Claims
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Key dates
| Filing date | Jul 18, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jul 18, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C19/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for generating a skyrmion, comprising: depositing a vertical metallic nanopillar electrode on a first side of a helimagnetic thin film, the helimagnetic thin film having a contact on a second side to provide a current drain; injecting a current through the vertical metallic nanopillar electrode to generate a rotating field; and applying a static upward magnetic field perpendicular to the helimagnetic thin film to maintain an FM phase background.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.