Plasma-assisted atomic layer epitaxy of cubic and hexagonal InN and its alloys with AIN at low temperatures
US9773666B2 · kind B2 · utility
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Key dates
| Filing date | Jun 13, 2013 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Apr 17, 2035 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/403
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Described herein is a method for growing indium nitride (InN) materials by growing hexagonal and/or cubic InN using a pulsed growth method at a temperature lower than 300° C. Also described is a material comprising InN in a face-centered cubic lattice crystalline structure having an NaCl type phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.