Apparatus for forming a transition metal chalcogenide thin-film
US9773668B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 8, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jul 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02614
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method of forming a transition metal chalcogenide thin-film and the method includes preparing a first substrate having formed thereon a transition metal-containing precursor thin-film; displacing a second substrate separately with a constant distance from the first substrate by using a bridge unit while the second substrate is facing the first substrate, thereby securing a gas flowing path between the first substrate and the second substrate; heating the first and second substrates to a reaction temperature; and introducing a chalcogen-containing gas from an end of a reactor, such that the chalcogen-containing gas flows via the path.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.