Semiconductor substrate and method for manufacturing semiconductor substrate
US9773678B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jul 9, 2015 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jul 9, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.