Semiconductor device and method of fabricating the same
US9773772B2 · kind B2 · utility
6Cited by
31References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 8, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Apr 8, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/797
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate, a gate electrode on the substrate, an insulating layer on the gate electrode, first and second lower vias in the insulating layer, first and second lower metal lines provided on the insulating layer and respectively connected to the first and second lower vias, and first and second upper metal lines provided on and respectively connected to the first and second lower metal lines. When viewed in a plan view, the first lower via is overlapped with the second upper metal line, and the second lower via is overlapped with the first upper metal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.