Patent · US Active

Semiconductor device, memory device, electronic device, or method for driving the semiconductor device

US9773787B2 · kind B2 · utility

9Cited by
79References
22Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 31, 2016
Grant dateSep 26, 2017
Priority date
Expiry dateOct 31, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/00014
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device with an improved arithmetic processing speed and a decreased circuit size, and its driving method are provided. In the semiconductor device, a first terminal of a first transistor and a gate of a second transistor are electrically connected to a first terminal of a capacitor, and a control circuit is electrically connected to a second terminal of the capacitor. The control circuit supplies a first potential to the second terminal of the capacitor, in other words, adds a value corresponding to the first potential to the value of first data previously retained in the gate of the second transistor in order to obtain second data. In the second transistor, the second data, specifically, a third potential commensurate with the potential of the gate will be output from a second terminal when a second potential is supplied to a first terminal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.