Thin film transistor and manufacturing method thereof, array substrate and display device
US9773817B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 30, 2014 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jul 2, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor comprises a gate electrode, an active layer, an etch stop layer, a source electrode and a drain electrode. The etch stop layer is provided between the active layer and the source and drain electrodes, a first via hole and a second via hole are formed in the etch stop layer, the source electrode is connected with the active layer through the first via hole, the drain electrode is connected with the active layer through the second via hole, and the gate electrode is overlapped with a part of the first via hole and a part of the second via hole respectively and is overlapped with a portion between the first via hole and the second via hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.