Patent · US Active

Method for reducing crosstalk in CMOS image sensor

US9773834B2 · kind B2 · utility

4Cited by

1References

13Claims

0Family size

Assignee

Semiconductor Manufacturing International (Shanghai) Corporation · CN

Inventors

Wenjie Peng · Shanghai, CN
Minwei Xi · Shanghai, CN

Key dates

Filing date	Oct 31, 2016
Grant date	Sep 26, 2017
Priority date	—
Expiry date	Oct 31, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10F39/807
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method of manufacturing a CMOS image sensor includes providing a semiconductor substrate having a front side and a back side, forming at least two pixels in the front side, forming a shallow trench isolation in the front side between the at least two pixels, forming a deep trench in the back side at a location above the shallow trench isolation, and depositing a dielectric layer in the deep trench to form a crosstalk reduction element.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.