Semiconductor composition containing iron, dysprosium, and terbium

US9773876B2 · kind B2 · utility

Assignee

• UT-BATTELLE, LLC · US

Inventors

• Raphael C. Pooser · Knoxville, US
• Benjamin J. Lawrie · Oak Ridge, US
• Arthur P. Baddorf · Knoxville, US
• Abhinav Malasi · Knoxville, US
• Humaira Taz · Knoxville, US
• Annettee E. Farah · Knoxville, US
• Ramakrishnan Kalyanaraman · Knoxville, US
• Gerd Josef Mansfred Duscher · Knoxville, US
• Maulik K. Patel · Knoxville, US

Key dates

• Filing date: Jun 28, 2016
• Grant date: Sep 26, 2017
• Expiry date: Jun 28, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6756
• WIPO field: Materials, metallurgy
• WIPO sector: Chemistry

Abstract

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.