Semiconductor devices including fin bodies with varied epitaxial layers
US9773908B2 · kind B2 · utility
0Cited by
7References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | May 14, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a first lattice structure and an upper portion, separated from the lower portion by a boundary, the upper portion having a second lattice structure that is different than the first lattice structure. An epitaxially grown epitxial layer can be on the lower and upper portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.