Metal oxide TFT with improved stability and mobility
US9773918B2 · kind B2 · utility
0Cited by
0References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2015 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jun 29, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film circuit includes a thin film transistor with a metal oxide semiconductor channel having a conduction band minimum (CBM) with a first energy level. The transistor further includes a layer of passivation material covering at least a portion of the metal oxide semiconductor channel. The passivation material has a conduction band minimum (CBM) with a second energy level. The second energy level being lower than, equal to, or no more than 0.5 eV above the first energy level. The circuit is used for an electronic device including any one of an AMLCD, AMOLED, AMLED, AMEPD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.