Solar cell with reduced absorber thickness and reduced back surface recombination
US9773927B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Apr 26, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
Manufacture of an improved stacked-layered thin film solar cell. The solar cell has reduced absorber thickness and an improved back contact for Copper Indium Gallium Selenide solar cells. The back contact provides improved reflectance particularly for infrared wavelengths while still maintaining ohmic contact to the semiconductor absorber. This reflectance is achieved by producing a back contact having a highly reflecting metal separated from an absorbing layer with a dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.