Gate driver for depletion-mode transistors
US9774322B1 · kind B1 · utility
9Cited by
49References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 22, 2016 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jun 22, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K2017/066
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
The present disclosure presents a circuit, a method, and a system to drive a half-bridge switch using depletion (D) mode compound semiconductor (III-V) switching transistors for a DC-DC converter using at least one driver to drive the switches of the circuit. Also included is at least one charge pump electrically connected to a gate of the transistor, to maintain a voltage that holds the transistor in an off-state. The circuit includes AC coupling capacitors to level shift a voltage and realize fast transistor switching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.