Infrared detector system and method
US9774795B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2012 |
| Grant date | Sep 26, 2017 |
| Priority date | — |
| Expiry date | Jul 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/00
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An infrared detector system is described which includes a detector diode array 3 and a non volatile memory 1. The non volatile memory 1 can use CMOS Silicon Fuse technology which can be polysilicon devices that are programmed using voltage-current-time profiles suitable for the silicon process technology, such that when applied will cause the polysilicon element to heat up rapidly and melt. This results in the fuse element going open circuit, just like blowing a known fuse. The fuse can act as a logic element that has a one time, user programmable and permanent logic state. An array of such memory cells is can be mapped to a sub pixel diode detector array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.