Laser crystallization of thin films on various substrates at low temperatures
US9776279B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 14, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Feb 3, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method and system are provided for crystallizing thin films with a laser system. The method includes obtaining a thin film comprising a substrate and a target layer that contains nano-scale particles and is deposited on the substrate. The heat conduction between the target layer and the substrate of the thin film is determined based on thermal input from the laser system to identify operating parameters for the laser system that cause crystallization of the nano-scale particles of the target layer in an environment at near room temperature with the substrate remaining at a temperature below the temperature of the target layer. The laser system is then operated with the determined operating parameters to generate a laser beam that is transmitted along an optical path to impinge the target layer. The laser beam is pulsed to create a localized rapid heating and cooling of the target layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.