Patent · US Active

Chunk polycrystalline silicon and process for cleaning polycrystalline silicon chunks

US9776876B2 · kind B2 · utility

2Cited by

4References

6Claims

0Family size

Assignee

Wacker Chemie AG · DE

Inventors

Gerhard Traunspurger · Burghausen, DE
Laszlo Fabry · Burghausen, DE
Reiner Pech · Vilshofen an der Donau, DE

Key dates

Filing date	Oct 30, 2015
Grant date	Oct 3, 2017
Priority date	—
Expiry date	Oct 30, 2035

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC01P2006/80
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

The invention provides chunk polycrystalline silicon having a concentration of carbon at the surface of 0.5-35 ppbw. A process for cleaning polycrystalline silicon chunks having carbon contaminations at the surface, includes a thermal treatment of the polycrystalline silicon chunks in a reactor at a temperature of 350 to 600° C., the polycrystalline silicon chunks being present in an inert gas atmosphere during the thermal treatment, and the polycrystalline silicon chunks after the thermal treatment having a concentration of carbon at the surface of 0.5-35 ppbw.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.