Patent · US Active

Microsystem device and methods for fabricating the same

US9778039B2 · kind B2 · utility

11Cited by
2References
31Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 31, 2012
Grant dateOct 3, 2017
Priority date
Expiry dateOct 31, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG01P15/125
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

A microsystem includes a base layer formed from an electrical insulating material. The base layer has an inner surface defining a cavity and an external surface opposed to the inner surface, and in direct communication with an environment. A cap layer and a microelectromechanical (MEMS) device layer are formed from electrical insulating material or an other electrical insulating material. The cap has an inner surface defining a cavity, and an external surface opposed to the inner surface, and in direct communication with the environment. A MEMS device on/in the MEMS device layer is disposed between the base and the cap. Respective adjacent portions of the base, the cap and the device substrate are bonded to define an enclosed space. The enclosed space at least partially includes the base cavity or the cap cavity. At least a portion of a MEMS device on the device layer is in the enclosed space.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.