Semiconductor inspection apparatus
US9778311B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jul 23, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The semiconductor inspection apparatus according to an embodiment includes a first detecting unit capable of being electrically connected to a source electrode of a field effect transistor to be evaluated, the first detecting unit used for detecting voltage, a first diode including a first anode electrode and a first cathode electrode, the first cathode electrode capable of being electrically connected to a drain electrode of the field effect transistor, a second detecting unit electrically connected to the first anode electrode, the second detecting unit used for detecting voltage, a first resistance element of which a first end is electrically connected to the first anode electrode, and a first electric power source electrically connected to a second end of the first resistance element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.