Mask for photolithography, method of manufacturing the same and method of manufacturing substrate using the same
US9778558B2 · kind B2 · utility
2Cited by
2References
20Claims
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Key dates
| Filing date | Jun 26, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 29, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A mask for photolithography includes: a transparent substrate; a phase shift pattern on the transparent substrate and configured to change a phase of light; a dielectric layer on the transparent substrate; and a negative refractive-index meta material layer on the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.