Voltage control circuit for memory cell and the method thereof
US9779827B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 17, 2036 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/145
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A voltage control circuit for a memory cell having a floating gate transistor and a capacitive device, comprising a first input terminal, a second input terminal, a first output terminal and a second input terminal, wherein the first input terminal is configured to receive a power supply voltage, the second input terminal is configured to receive a ground reference, and wherein based on the power supply voltage and the ground reference, the first output terminal and the second output terminal respectively provides a first voltage signal and a second voltage signal, and wherein a voltage value of the first voltage signal is twice the power supply voltage, and a maximum of a voltage difference between the first voltage signal and the second voltage signal is three times the power supply voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.