Primary voltaic sources including nanofiber Schottky barrier arrays and methods of forming same
US9779845B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 17, 2013 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Mar 9, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S322/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Primary voltaic sources include nanofiber Schottky barrier arrays and a radioactive source including at least one radioactive element configured to emit radioactive particles. The arrays have a semiconductor component and a metallic component joined at a metal-semiconductor junction. The radioactive source is positioned proximate to the arrays such that at least a portion of the radioactive particles impinge on the arrays to produce a flow of electrons across the metal-semiconductor junction. Methods of producing voltaic sources include reacting at least one carbon oxide and a reducing agent in the presence of a substrate comprising a catalyst to form a solid carbon product over the substrate. Material is disposed over at least a portion of the solid carbon product to form a nanofiber Schottky barrier array. A radioactive source is disposed adjacent the nanofiber Schottky barrier array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.