Self-aligned insulated film for high-k metal gate device
US9779947B2 · kind B2 · utility
0Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Jan 6, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jan 6, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28088
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a semiconductor substrate, a gate dielectric over the substrate, a metal gate structure over the semiconductor substrate and the gate dielectric, a dielectric film on the metal gate structure, the dielectric film comprising oxynitride combined with metal from the metal gate, and an interlayer dielectric (ILD) on either side of the metal gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.