Method for making patterns by self-assembly of block copolymers
US9779985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 21, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | May 21, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making patterns includes forming on a substrate surface a first mask delimiting at least two areas to be metallised; forming an assembly guide above the first mask, the assembly guide delimiting a surface covering two contact areas belonging respectively to the two areas to be metallised; depositing on the surface a block copolymer layer; reorganising the block copolymer layer; eliminating one of the phases of the reorganised block copolymer layer, resulting in a plurality of holes extending into the block copolymer layer above the two contact areas and a portion of the first mask arranged between the two contact areas; widening the holes of the block copolymer layer until a continuous trench is formed above the two contact areas and the portion of the first mask; transferring, through the first mask, the continuous trench onto the surface of the substrate to form patterns corresponding to the contact areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.