Semiconductor device, method for manufacturing the same, and rinsing liquid
US9780008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2013 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.