Dual-port SRAM devices and methods of manufacturing the same
US9780097B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Dec 10, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
A dual-port SRAM device includes a substrate having a field region and first to fourth active fins extending in a first direction, and a unit cell having first to eighth gate structures. The first and second gate structures are on the first, second and fourth active fins, and extend in a second direction crossing the first direction. The third and fourth gate structures are on the first, second and third active fins, and extend in the second direction. The fifth and sixth gate structures are on the third active fin, and extend in the second direction. The seventh and eighth gate structures are on the fourth active fin, and extend in the second direction. The sixth gate structure is electrically connected to the third gate structure through the first contact plug, and the seventh gate structure is electrically connected to the second gate structure through a second contact plug.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.