Three level transfer gate
US9780138B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 26, 2014 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Nov 26, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8037
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method and device of driving a radiation sensor pixel is disclosed. The sensor pixel comprises a sensing element capable of charge generation as a response to impinging radiation, a floating diffusion node, a transfer gate between the sensing element and the floating diffusion node, and a charge storage device connected to the floating diffusion node via a switch. The method comprises biasing the transfer gate to three or more bias voltages OFF, ON and an intermediate bias between OFF and ON. During the period in which the transfer gate is biased to the intermediate bias, if the sensor reaches saturation, the overflown charges may be collected and part of them stored in the charge storage device, for further analysis and merging.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.