Semiconductor device and manufacturing method of the same
US9780201B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/01
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To improve the electrical characteristics of a semiconductor device including an oxide semiconductor, and to provide a highly reliable semiconductor device with a small variation in electrical characteristics. The semiconductor device includes a first insulating film, a first barrier film over the first insulating film, a second insulating film over the first barrier film, and a first transistor including a first oxide semiconductor film over the second insulating film. The amount of hydrogen molecules released from the first insulating film at a given temperature higher than or equal to 400° C., which is measured by thermal desorption spectroscopy, is less than or equal to 130% of the amount of released hydrogen molecules at 300° C. The second insulating film includes a region containing oxygen at a higher proportion than oxygen in the stoichiometric composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.