Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof
US9780246B2 · kind B2 · utility
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Key dates
| Filing date | Jun 19, 2013 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jan 15, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu2ZnSnS4 thin film layer; forming a Cu2ZnSn(S,Se)4 thin film layer; and forming a Cu2ZnSnS4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.