SPAD-type photodiode

US9780247B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Norbert Moussy · Grenoble, FR
• Jean-Louis Ouvrier-Buffet · Sevrier, FR

Key dates

• Filing date: Sep 29, 2016
• Grant date: Oct 3, 2017
• Expiry date: Sep 29, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10F77/206

Abstract

A SPAD including, in a substrate of a first conductivity type: a first region of the second conductivity type extending from the upper surface of the substrate; a second region of the first type of greater doping level than the substrate, extending from the lower surface of the first region, having a surface area smaller than that of the first region and being located opposite a central portion of the first region; a third region of the first type of greater doping level than the substrate extending from the upper surface of the substrate, laterally surrounding the first region; and a fourth buried region of the first type of greater doping level than the substrate, forming a peripheral ring connecting the second region to the third region.