Method of preparing quantum dot layer, QLED display device having the quantum dot layer and method of preparing the same
US9780257B1 · kind B1 · utility
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19Claims
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Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Jul 29, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/0364
Abstract
A method of preparing a quantum dot layer, including: placing an anodic aluminum oxide sheet with a plurality of through holes on a substrate; dispersing quantum dots into the plurality of through holes of the anodic aluminum oxide sheet; and removing the anodic aluminum oxide sheet to form a quantum dot layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.