Vertical-type organic light-emitting transistors with reduced leakage current and method for fabricating the same
US9780340B2 · kind B2 · utility
0Cited by
3References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2016 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Apr 19, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K71/00
Abstract
A vertical-type organic light-emitting transistor for reducing the off-state leakage current to improve the current and on-off ratio includes a gate electrode, a lower semiconductor layer disposed on the gate electrode, a source electrode disposed on the lower semiconductor layer, and a source insulation film disposed on the source electrode and covering top and sides of the source electrode, wherein the lower semiconductor layer is configured such that an electric charge is injected into the lower semiconductor layer from the source electrode when voltage is applied to the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.