Semiconductor integrated optical device, manufacturing method thereof and optical module
US9780530B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 8, 2015 |
| Grant date | Oct 3, 2017 |
| Priority date | — |
| Expiry date | Feb 15, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2275
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a butt-jointed (BJ) semiconductor integrated optical device having a high manufacturing yield. A semiconductor integrated optical device, which is configured such that, on a semiconductor substrate, a first semiconductor optical element including an active layer and a second semiconductor optical element including a waveguide layer are butt-jointed to each other with their optical axes being aligned with each other, includes: a semiconductor regrowth layer including at least one of a diffraction grating layer or an etching stop layer, which is formed by one epitaxial growth across an entire surface above the active layer and the waveguide layer; and a cladding layer formed above the semiconductor regrowth layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.