Patent · US Active

Operating method of nonvolatile memory device and nonvolatile memory system

US9785379B2 · kind B2 · utility

1Cited by
2References
14Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 6, 2015
Grant dateOct 10, 2017
Priority date
Expiry dateJul 12, 2035

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F12/0246
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

An operating method of a nonvolatile memory device which includes receiving a plurality of sub-page data and a write command from an external device; performing a pre-main program operation such that at least one of the plurality of sub-page data is stored in the second plurality of memory cells included in the main region; performing a buffered program operation such that other received sub-page data is stored in the first plurality of memory cells included in the buffer region; and performing a re-main program operation such that the received sub-page data subjected to the buffered program operation at the buffer region is stored in the second plurality of memory cells subjected to the pre-main program operation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.