GOA circuit based on P-type thin film transistors
US9786239B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 20, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 6, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG09G2330/021
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a GOA circuit based on P-type thin film transistor, comprising a plurality of GOA unit circuits which are cascade connected, and the GOA unit circuit of every stage comprises a forward-backward scan module (100), an output module (200), a pull-down holding module (300) and a pull-down module (400); the GOA unit circuit of the nth stage and the GOA unit circuit of the n+1th stage adjacent thereto are one cycle; the forward-backward scan module (100) employs the first high frequency clock signal (LCK) and the first backward high frequency clock signal (XLCK) to control the forward-backward scan of the P-type thin film transistor. The GOA circuit based on P-type thin film transistor can ease the deterioration of the thin film transistors in the forward-backward scan module, and reduce the circuit power consumption to decrease the number of the signal lines and realize the narrow frame design. Moreover, it can promote the stability of the GOA circuit and ensure the smooth output of the scan signal (G(n)).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.