Sequential infiltration synthesis for advanced lithography
US9786511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Mar 11, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31522
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.