Thin-film photovoltaic device and fabrication method
US9786807B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Apr 17, 2012 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Feb 8, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to fabricate thin-film photovoltaic devices including a photovoltaic Cu(In,Ga)Se2 or equivalent ABC absorber layer, such as an ABC2 layer, deposited onto a back-contact layer characterized in that the method includes at least five deposition steps, during which the pair of third and fourth steps are sequentially repeatable, in the presence of at least one C element over one or more steps. In the first step at least one B element is deposited, followed in the second by deposition of A and B elements at a deposition rate ratio Ar/Br, in the third at a ratio Ar/Br lower than the previous, in the fourth at a ratio Ar/Br higher than the previous, and in the fifth depositing only B elements to achieve a final ratio A/B of total deposited elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.