Method of manufacturing an image sensor device
US9786856B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2016 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 15, 2036 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of manufacturing an image sensor device includes providing a metalized thin film transistor layer on a glass substrate; forming an inter-layer dielectric layer on the metalized thin film transistor layer; forming a via through the inter-layer dielectric layer; forming a metal layer the inter-layer dielectric and within the inter-layer dielectric layer via for contacting the metalized thin film transistor layer; forming a bank layer on the metal layer and the inter-layer dielectric layer; forming a via through the bank layer; forming an electron transport layer on the bank layer and within the bank layer via for contacting an upper surface of the metal layer; forming a bulk heterojunction layer on the electron transport layer; forming a hole transport layer on the bulk heterojunction layer; and forming a top contact layer on the hole transport layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.