Electronic structure having at least one metal growth layer and method for producing an electronic structure
US9786868B2 · kind B2 · utility
1Cited by
8References
4Claims
0Family size
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Key dates
| Filing date | Mar 19, 2013 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Mar 19, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/549
Abstract
Various embodiments may relate to an electronic structure, including at least one organic layer, at least one metal growth layer grown onto the organic layer, and at least one metal layer grown on the metal growth layer. The at least one metal growth layer contains germanium. Various embodiments further relate to a method for producing the electronic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.