Patent · US Active

Vertical cavity surface emitting laser array and method for manufacturing vertical cavity surface emitting laser array

US9787062B2 · kind B2 · utility

1Cited by
0References
13Claims
0Family size

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Key dates

Filing dateJul 14, 2016
Grant dateOct 10, 2017
Priority date
Expiry dateJul 14, 2036

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01S2301/176
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A vertical cavity surface emitting laser array includes a contact layer formed on a substrate; mesa structures formed on the contact layer, each mesa structure including a first semiconductor multilayer reflector of a first conductivity type, an active region on the first semiconductor multilayer reflector, and a second semiconductor multilayer reflector of a second conductivity type on the active region; a first metal layer formed on the contact layer around the mesa structures, a portion of the first metal layer serving as an electrode pad of the first conductivity type; an insulating film formed on the first metal layer; and a second metal layer formed on the insulating film, a portion of the second metal layer serving as an electrode pad of the second conductivity type. The mesa structures are electrically connected in parallel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.