Motor drive with silicon carbide MOSFET switches
US9787212B2 · kind B2 · utility
1Cited by
7References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 29, 2015 |
| Grant date | Oct 10, 2017 |
| Priority date | — |
| Expiry date | Aug 27, 2035 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02B70/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Motor drive power conversion systems are provided including a rectifier and a switching inverter, wherein the switching devices of the rectifier, the inverter and/or of a DC/DC converter are silicon carbide switches, such as silicon carbide MOSFETs. Driver circuits are provided for providing bipolar gate drive signals to the silicon carbide MOSFETs, including providing negative gate-source voltage for controlling the off state of enhancement mode low side drivers and positive gate-source voltage for controlling the off state of enhancement mode high side drivers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.