Patent · US Active

Laser-induced gas plasma machining

US9790090B2 · kind B2 · utility

0Cited by
6References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 12, 2013
Grant dateOct 17, 2017
Priority date
Expiry dateJun 11, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32449
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

Techniques for removing material from a substrate are provided. A laser beam is focused at a distance from the surface to be treated. A gas is provided at the focus point. The gas is dissociated using the laser energy to generate gas plasma. The substrate is then brought in contact with the gas plasma to enable material removal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.