Laser-induced gas plasma machining
US9790090B2 · kind B2 · utility
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10Claims
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Key dates
| Filing date | Mar 12, 2013 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jun 11, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Techniques for removing material from a substrate are provided. A laser beam is focused at a distance from the surface to be treated. A gas is provided at the focus point. The gas is dissociated using the laser energy to generate gas plasma. The substrate is then brought in contact with the gas plasma to enable material removal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.