CMOS compatible BioFET
US9791406B2 · kind B2 · utility
3Cited by
26References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2016 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Oct 3, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/615
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.