Methods of forming semiconductor device including capacitors with modified sidewalls and related devices
US9793133B2 · kind B2 · utility
0Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2014 |
| Grant date | Oct 17, 2017 |
| Priority date | — |
| Expiry date | Jun 30, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming a semiconductor device can be provided by forming a first molding layer on a substrate and forming a first hole through the first molding layer. A second molding layer can be formed on the first molding layer so that the first hole is retained in the first molding layer and a second hole can be formed through the second molding layer to connect with the first hole. A capacitor electrode can be formed in the first and second holes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.